Applications of Silicon-Germanium Heterostructure DevicesAuthor :
Hardback
Published : Friday 20 July 2001
Description
Deals with the design and optimization of transistors made from strained layers. This book covers key technology issues for the growth of strained layers, background theory of the HBT, and how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics.
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